UGB12JTHE3/45 Pagpepresyo (USD) [2056pcs Stock]
- 1,000 pcs$0.34895
- Bilang ng Bahagi:
- UGB12JTHE3/45
- Tagagawa:
- Vishay Semiconductor Diodes Division
- Detalyadong Paglalarawan:
- DIODE GEN PURP 600V 12A TO263AB.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Diode - Zener - Arrays, Thyristors - Mga SCR, Thyristors - DIACs, SIDACs, Transistor - Espesyal na Pakay, Diode - Zener - Single, Diode - Mga Rectifier ng Bridge and Transistor - Programmable Unijunction ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Semiconductor Diodes Division UGB12JTHE3/45 electronic components. UGB12JTHE3/45 can be shipped within 24 hours after order. If you have any demands for UGB12JTHE3/45, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
UGB12JTHE3/45 Mga katangian ng produkto
Bilang ng Bahagi :
UGB12JTHE3/45
Tagagawa :
Vishay Semiconductor Diodes Division
Paglalarawan :
DIODE GEN PURP 600V 12A TO263AB
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
600V
Kasalukuyang - Average na Rectified (Io) :
12A
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.75V @ 12A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
50ns
Kasalukuyang - Reverse Leakage @ Vr :
30µA @ 600V
Capacitance @ Vr, F :
-
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package ng Tagabigay ng Device :
TO-263AB
Operating temperatura - Junction :
-55°C ~ 150°C
Pinakabagong Balita
Maaari ka ring Makisalamuha sa
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IDB15E60
Infineon Technologies
DIODE GEN PURP 600V 29.2A TO263. Diodes - General Purpose, Power, Switching Fast Switching 600V EmCon Diode
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