[13191pcs Stock]
- Bilang ng Bahagi:
- BSP316PE6327
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET P-CH 100V 0.68A SOT223.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Arrays, Mga module ng Power driver, Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs, Mga Transistor - Bipolar (BJT) - RF, Thyristors - Mga TRIAC and Transistor - Bipolar (BJT) - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies BSP316PE6327 electronic components. BSP316PE6327 can be shipped within 24 hours after order. If you have any demands for BSP316PE6327, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSP316PE6327 Mga katangian ng produkto
Bilang ng Bahagi :
BSP316PE6327
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET P-CH 100V 0.68A SOT223
Serye :
SIPMOS®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
680mA (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.8 Ohm @ 680mA, 10V
Vgs (th) (Max) @ Id :
2V @ 170µA
Gate Charge (Qg) (Max) @ Vgs :
6.4nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
146pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
1.8W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-SOT223-4
Pakete / Kaso :
TO-261-4, TO-261AA
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