IXTA2N80 Pagpepresyo (USD) [29815pcs Stock]
- 1 pcs$1.52808
- 200 pcs$1.52048
- Bilang ng Bahagi:
- IXTA2N80
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 800V 2A TO-263.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Single, Transistor - Mga FET, MOSFET - Arrays, Transistors - IGBTs - Single, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - IGBTs - Mga Module, Diode - Mga Rectifier ng Bridge and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXTA2N80 electronic components. IXTA2N80 can be shipped within 24 hours after order. If you have any demands for IXTA2N80, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTA2N80 Mga katangian ng produkto
Bilang ng Bahagi :
IXTA2N80
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 800V 2A TO-263
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
2A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
6.2 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
54W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-263 (IXTA)
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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