DMN2015UFDF-13 Pagpepresyo (USD) [591719pcs Stock]
- 1 pcs$0.06251
- Bilang ng Bahagi:
- DMN2015UFDF-13
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET N-CH 20V 15.2A UDFN2020-6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Transistor - Espesyal na Pakay, Diode - RF, Mga Transistor - Bipolar (BJT) - RF, Diode - Mga Rectifier ng Bridge, Mga Transistor - FET, MOSFET - RF, Transistor - Programmable Unijunction and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMN2015UFDF-13 electronic components. DMN2015UFDF-13 can be shipped within 24 hours after order. If you have any demands for DMN2015UFDF-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2015UFDF-13 Mga katangian ng produkto
Bilang ng Bahagi :
DMN2015UFDF-13
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET N-CH 20V 15.2A UDFN2020-6
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
15.2A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
9 mOhm @ 8.5A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
42.3nC @ 10V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
1439pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
1.8W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
U-DFN2020-6
Pakete / Kaso :
6-UDFN Exposed Pad
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