FCP260N65S3 Pagpepresyo (USD) [78097pcs Stock]
- 1 pcs$0.50067
- Bilang ng Bahagi:
- FCP260N65S3
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 650V 260MOHM TO220.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Transistor - IGBTs - Mga Module, Mga module ng Power driver, Thyristors - Mga TRIAC, Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Single, Mga Transistor - Bipolar (BJT) - RF and Mga Transistor - JFET ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FCP260N65S3 electronic components. FCP260N65S3 can be shipped within 24 hours after order. If you have any demands for FCP260N65S3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FCP260N65S3 Mga katangian ng produkto
Bilang ng Bahagi :
FCP260N65S3
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 650V 260MOHM TO220
Serye :
SuperFET® III
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
12A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
260 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1010pF @ 400V
Tampok ng FET :
-
Power Dissipation (Max) :
90W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220-3
Pakete / Kaso :
TO-220-3
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