[13321pcs Stock]
- Bilang ng Bahagi:
- IRFR120Z
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V 8.7A DPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Thyristors - DIACs, SIDACs, Mga Transistor - Bipolar (BJT) - RF, Mga Transistor - JFET, Diode - Zener - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Single, Pre-Biased and Transistor - Bipolar (BJT) - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRFR120Z electronic components. IRFR120Z can be shipped within 24 hours after order. If you have any demands for IRFR120Z, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFR120Z Mga katangian ng produkto
Bilang ng Bahagi :
IRFR120Z
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 100V 8.7A DPAK
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
8.7A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
190 mOhm @ 5.2A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
310pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
35W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
D-Pak
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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