Infineon Technologies - IPB65R190CFDAATMA1

KEY Part #: K6417872

IPB65R190CFDAATMA1 Pagpepresyo (USD) [44082pcs Stock]

  • 1 pcs$0.88700
  • 1,000 pcs$0.87490

Bilang ng Bahagi:
IPB65R190CFDAATMA1
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
MOSFET N-CH TO263-3.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Diode - Zener - Arrays, Diode - Mga Rectifier ng Bridge, Mga module ng Power driver, Transistor - IGBTs - Arrays, Diode - RF, Thyristors - SCR - Mga Module and Transistor - Espesyal na Pakay ...
Kumpetensyang Pakinabang:
We specialize in Infineon Technologies IPB65R190CFDAATMA1 electronic components. IPB65R190CFDAATMA1 can be shipped within 24 hours after order. If you have any demands for IPB65R190CFDAATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB65R190CFDAATMA1 Mga katangian ng produkto

Bilang ng Bahagi : IPB65R190CFDAATMA1
Tagagawa : Infineon Technologies
Paglalarawan : MOSFET N-CH TO263-3
Serye : Automotive, AEC-Q101, CoolMOS™
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 17.5A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 190 mOhm @ 7.3A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs : 68nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1850pF @ 100V
Tampok ng FET : -
Power Dissipation (Max) : 151W (Tc)
Temperatura ng pagpapatakbo : -40°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : D²PAK (TO-263AB)
Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB