DN3525N8-G Pagpepresyo (USD) [180152pcs Stock]
- 1 pcs$0.21035
- 2,000 pcs$0.20930
- Bilang ng Bahagi:
- DN3525N8-G
- Tagagawa:
- Microchip Technology
- Detalyadong Paglalarawan:
- MOSFET N-CH 250V 360MA SOT89-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Thyristors - Mga SCR, Mga Transistor - JFET, Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - Mga TRIAC, Diode - Mga Rectifier ng Bridge and Thyristors - SCR - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in Microchip Technology DN3525N8-G electronic components. DN3525N8-G can be shipped within 24 hours after order. If you have any demands for DN3525N8-G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DN3525N8-G Mga katangian ng produkto
Bilang ng Bahagi :
DN3525N8-G
Tagagawa :
Microchip Technology
Paglalarawan :
MOSFET N-CH 250V 360MA SOT89-3
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
250V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
360mA (Tj)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
0V
Rds On (Max) @ Id, Vgs :
6 Ohm @ 200mA, 0V
Vgs (th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 25V
Tampok ng FET :
Depletion Mode
Power Dissipation (Max) :
1.6W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-243AA (SOT-89)
Pakete / Kaso :
TO-243AA
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