[2645pcs Stock]
- Bilang ng Bahagi:
- GP1M010A080H
- Tagagawa:
- Global Power Technologies Group
- Detalyadong Paglalarawan:
- MOSFET N-CH 800V 9.5A TO220.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Rectifiers - Arrays, Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Single, Diode - Rectifiers - Single and Diode - Iba't ibang Kakayahan (Varicaps, Varactors ...
- Kumpetensyang Pakinabang:
- We specialize in Global Power Technologies Group GP1M010A080H electronic components. GP1M010A080H can be shipped within 24 hours after order. If you have any demands for GP1M010A080H, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GP1M010A080H Mga katangian ng produkto
Bilang ng Bahagi :
GP1M010A080H
Tagagawa :
Global Power Technologies Group
Paglalarawan :
MOSFET N-CH 800V 9.5A TO220
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
9.5A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.05 Ohm @ 4.75A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
53nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
2336pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
290W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220
Pakete / Kaso :
TO-220-3
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