[100pcs Stock]
- Bilang ng Bahagi:
- BSP318S E6327
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 60V 2.6A SOT-223.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga Transistor - FET, MOSFET - RF, Diode - Mga Rectifier ng Bridge, Thyristors - DIACs, SIDACs, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Arrays, Mga module ng Power driver and Mga Transistor - JFET ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies BSP318S E6327 electronic components. BSP318S E6327 can be shipped within 24 hours after order. If you have any demands for BSP318S E6327, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSP318S E6327 Mga katangian ng produkto
Bilang ng Bahagi :
BSP318S E6327
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 60V 2.6A SOT-223
Serye :
SIPMOS®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
2.6A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
90 mOhm @ 2.6A, 10V
Vgs (th) (Max) @ Id :
2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
380pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
1.8W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-SOT223-4
Pakete / Kaso :
TO-261-4, TO-261AA
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