HGT1S10N120BNST Pagpepresyo (USD) [51869pcs Stock]
- 1 pcs$0.96859
- 800 pcs$0.96377
- 1,600 pcs$0.81282
- 2,400 pcs$0.77411
- Bilang ng Bahagi:
- HGT1S10N120BNST
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- IGBT 1200V 35A 298W TO263AB.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - SCR - Mga Module, Thyristors - DIACs, SIDACs, Diode - RF, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Zener - Single, Diode - Zener - Arrays and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor HGT1S10N120BNST electronic components. HGT1S10N120BNST can be shipped within 24 hours after order. If you have any demands for HGT1S10N120BNST, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HGT1S10N120BNST Mga katangian ng produkto
Bilang ng Bahagi :
HGT1S10N120BNST
Tagagawa :
ON Semiconductor
Paglalarawan :
IGBT 1200V 35A 298W TO263AB
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng IGBT :
NPT
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
1200V
Kasalukuyang - Kolektor (Ic) (Max) :
35A
Kasalukuyang - Kolektor ng Pulsed (Icm) :
80A
Vce (on) (Max) @ Vge, Ic :
2.7V @ 15V, 10A
Kapangyarihan - Max :
298W
Paglipat ng Enerhiya :
320µJ (on), 800µJ (off)
Uri ng input :
Standard
Gate Charge :
100nC
Td (on / off) @ 25 ° C :
23ns/165ns
Kondisyon ng Pagsubok :
960V, 10A, 10 Ohm, 15V
Reverse Recovery Time (trr) :
-
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package ng Tagabigay ng Device :
TO-263AB
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