NGTB10N60R2DT4G Pagpepresyo (USD) [9228pcs Stock]
- 2,500 pcs$0.24215
- 5,000 pcs$0.23062
- Bilang ng Bahagi:
- NGTB10N60R2DT4G
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- IGBT 10A 600V DPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Mga Transistor - FET, MOSFET - RF, Diode - Zener - Arrays, Diode - RF, Transistor - Espesyal na Pakay, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor NGTB10N60R2DT4G electronic components. NGTB10N60R2DT4G can be shipped within 24 hours after order. If you have any demands for NGTB10N60R2DT4G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NGTB10N60R2DT4G Mga katangian ng produkto
Bilang ng Bahagi :
NGTB10N60R2DT4G
Tagagawa :
ON Semiconductor
Paglalarawan :
IGBT 10A 600V DPAK
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng IGBT :
-
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
600V
Kasalukuyang - Kolektor (Ic) (Max) :
20A
Kasalukuyang - Kolektor ng Pulsed (Icm) :
40A
Vce (on) (Max) @ Vge, Ic :
2.1V @ 15V, 10A
Kapangyarihan - Max :
72W
Paglipat ng Enerhiya :
412µJ (on), 140µJ (off)
Uri ng input :
Standard
Gate Charge :
53nC
Td (on / off) @ 25 ° C :
48ns/120ns
Kondisyon ng Pagsubok :
300V, 10A, 30 Ohm, 15V
Reverse Recovery Time (trr) :
90ns
Temperatura ng pagpapatakbo :
175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
Package ng Tagabigay ng Device :
DPAK
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