[1330pcs Stock]
- Bilang ng Bahagi:
- SI2327DS-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET P-CH 200V 0.38A SOT-23.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Programmable Unijunction, Diode - Rectifiers - Single, Thyristors - Mga SCR, Transistor - IGBTs - Mga Module, Thyristors - Mga TRIAC and Transistor - Mga FET, MOSFET - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SI2327DS-T1-GE3 electronic components. SI2327DS-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI2327DS-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI2327DS-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SI2327DS-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET P-CH 200V 0.38A SOT-23
Serye :
TrenchFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
380mA (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
2.35 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
510pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
750mW (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
SOT-23-3 (TO-236)
Pakete / Kaso :
TO-236-3, SC-59, SOT-23-3
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