IRFB812PBF Pagpepresyo (USD) [188931pcs Stock]
- 1 pcs$0.19577
- 1,000 pcs$0.18794
- Bilang ng Bahagi:
- IRFB812PBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N CH 500V 3.6A TO220AB.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - SCR - Mga Module, Transistors - IGBTs - Single, Transistor - IGBTs - Mga Module, Mga module ng Power driver, Transistor - Mga FET, MOSFET - Single, Transistor - IGBTs - Arrays, Thyristors - DIACs, SIDACs and Diode - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRFB812PBF electronic components. IRFB812PBF can be shipped within 24 hours after order. If you have any demands for IRFB812PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB812PBF Mga katangian ng produkto
Bilang ng Bahagi :
IRFB812PBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N CH 500V 3.6A TO220AB
Serye :
HEXFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
500V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3.6A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.2 Ohm @ 2.2A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
810pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
78W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220AB
Pakete / Kaso :
TO-220-3
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