Infineon Technologies - SIDC03D120H6X1SA3

KEY Part #: K6449686

[657pcs Stock]


    Bilang ng Bahagi:
    SIDC03D120H6X1SA3
    Tagagawa:
    Infineon Technologies
    Detalyadong Paglalarawan:
    DIODE GEN PURP 1.2KV 3A WAFER.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Single, Mga Transistor - FET, MOSFET - RF, Transistors - IGBTs - Single, Thyristors - Mga SCR, Diode - RF, Diode - Rectifiers - Single and Diode - Mga Rectifier ng Bridge ...
    Kumpetensyang Pakinabang:
    We specialize in Infineon Technologies SIDC03D120H6X1SA3 electronic components. SIDC03D120H6X1SA3 can be shipped within 24 hours after order. If you have any demands for SIDC03D120H6X1SA3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SIDC03D120H6X1SA3 Mga katangian ng produkto

    Bilang ng Bahagi : SIDC03D120H6X1SA3
    Tagagawa : Infineon Technologies
    Paglalarawan : DIODE GEN PURP 1.2KV 3A WAFER
    Serye : -
    Katayuan ng Bahagi : Discontinued at Digi-Key
    Uri ng Diode : Standard
    Boltahe - DC Reverse (Vr) (Max) : 1200V
    Kasalukuyang - Average na Rectified (Io) : 3A (DC)
    Boltahe - Ipasa (Vf) (Max) @ Kung : 1.6V @ 3A
    Bilis : Standard Recovery >500ns, > 200mA (Io)
    Reverse Recovery Time (trr) : -
    Kasalukuyang - Reverse Leakage @ Vr : 27µA @ 1200V
    Capacitance @ Vr, F : -
    Uri ng Pag-mount : Surface Mount
    Pakete / Kaso : Die
    Package ng Tagabigay ng Device : Sawn on foil
    Operating temperatura - Junction : -55°C ~ 150°C

    Maaari ka ring Makisalamuha sa
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      Cree/Wolfspeed

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