BSF134N10NJ3GXUMA1 Pagpepresyo (USD) [116513pcs Stock]
- 1 pcs$0.31745
- Bilang ng Bahagi:
- BSF134N10NJ3GXUMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V 9A WDSON-2.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Mga Transistor - Bipolar (BJT) - RF, Transistor - IGBTs - Arrays, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCR - Mga Module, Thyristors - Mga SCR and Transistor - Bipolar (BJT) - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies BSF134N10NJ3GXUMA1 electronic components. BSF134N10NJ3GXUMA1 can be shipped within 24 hours after order. If you have any demands for BSF134N10NJ3GXUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSF134N10NJ3GXUMA1 Mga katangian ng produkto
Bilang ng Bahagi :
BSF134N10NJ3GXUMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 100V 9A WDSON-2
Serye :
OptiMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
9A (Ta), 40A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
13.4 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2300pF @ 50V
Tampok ng FET :
-
Power Dissipation (Max) :
2.2W (Ta), 43W (Tc)
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
MG-WDSON-2, CanPAK M™
Pakete / Kaso :
3-WDSON
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