IRL6372TRPBF Pagpepresyo (USD) [239454pcs Stock]
- 1 pcs$0.15447
- 4,000 pcs$0.13247
- Bilang ng Bahagi:
- IRL6372TRPBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 30V 8.1A 8SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Arrays, Diode - RF, Transistor - Mga FET, MOSFET - Single, Transistors - IGBTs - Single, Mga Transistor - JFET, Transistor - Mga FET, MOSFET - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRL6372TRPBF electronic components. IRL6372TRPBF can be shipped within 24 hours after order. If you have any demands for IRL6372TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRL6372TRPBF Mga katangian ng produkto
Bilang ng Bahagi :
IRL6372TRPBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET 2N-CH 30V 8.1A 8SOIC
Serye :
HEXFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
8.1A
Rds On (Max) @ Id, Vgs :
17.9 mOhm @ 8.1A, 4.5V
Vgs (th) (Max) @ Id :
1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
1020pF @ 25V
Kapangyarihan - Max :
2W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
Package ng Tagabigay ng Device :
8-SO
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