Bilang ng Bahagi :
IPB80N06S2H5ATMA2
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 55V 80A TO263-3
Katayuan ng Bahagi :
Active
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
55V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
80A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
5.2 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id :
4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
4400pF @ 25V
Power Dissipation (Max) :
300W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-TO263-3-2
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB