CSD19536KCS Pagpepresyo (USD) [19897pcs Stock]
- 1 pcs$2.29164
- 10 pcs$2.04441
- 100 pcs$1.67651
- 500 pcs$1.35756
- 1,000 pcs$1.08622
- Bilang ng Bahagi:
- CSD19536KCS
- Tagagawa:
- Texas Instruments
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V TO-220.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Arrays, Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Mga FET, MOSFET - Arrays, Transistor - Mga FET, MOSFET - Single, Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Arrays and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in Texas Instruments CSD19536KCS electronic components. CSD19536KCS can be shipped within 24 hours after order. If you have any demands for CSD19536KCS, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD19536KCS Mga katangian ng produkto
Bilang ng Bahagi :
CSD19536KCS
Tagagawa :
Texas Instruments
Paglalarawan :
MOSFET N-CH 100V TO-220
Serye :
NexFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
150A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
2.7 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
153nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
12000pF @ 50V
Tampok ng FET :
-
Power Dissipation (Max) :
375W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220-3
Pakete / Kaso :
TO-220-3
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