[2124pcs Stock]
- Bilang ng Bahagi:
- HS54095TZ-E
- Tagagawa:
- Renesas Electronics America
- Detalyadong Paglalarawan:
- MOSFET N-CH 600V 0.2A TO-92.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Transistor - Mga FET, MOSFET - Single, Transistor - IGBTs - Arrays, Diode - Zener - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Thyristors - DIACs, SIDACs, Mga Transistor - FET, MOSFET - RF and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in Renesas Electronics America HS54095TZ-E electronic components. HS54095TZ-E can be shipped within 24 hours after order. If you have any demands for HS54095TZ-E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HS54095TZ-E Mga katangian ng produkto
Bilang ng Bahagi :
HS54095TZ-E
Tagagawa :
Renesas Electronics America
Paglalarawan :
MOSFET N-CH 600V 0.2A TO-92
Serye :
-
Katayuan ng Bahagi :
Last Time Buy
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
200mA (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
16.5 Ohm @ 100mA, 10V
Vgs (th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
4.8nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
66pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
750mW (Ta)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-92-3
Pakete / Kaso :
TO-226-3, TO-92-3 Short Body
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