Toshiba Semiconductor and Storage - SSM6N44FE,LM

KEY Part #: K6525139

SSM6N44FE,LM Pagpepresyo (USD) [1230545pcs Stock]

  • 1 pcs$0.03323
  • 4,000 pcs$0.03306

Bilang ng Bahagi:
SSM6N44FE,LM
Tagagawa:
Toshiba Semiconductor and Storage
Detalyadong Paglalarawan:
MOSFET 2N-CH 30V 0.1A ES6.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga Transistor - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Arrays, Transistor - Programmable Unijunction, Transistor - Mga FET, MOSFET - Single, Transistor - IGBTs - Arrays and Transistors - IGBTs - Single ...
Kumpetensyang Pakinabang:
We specialize in Toshiba Semiconductor and Storage SSM6N44FE,LM electronic components. SSM6N44FE,LM can be shipped within 24 hours after order. If you have any demands for SSM6N44FE,LM, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM6N44FE,LM Mga katangian ng produkto

Bilang ng Bahagi : SSM6N44FE,LM
Tagagawa : Toshiba Semiconductor and Storage
Paglalarawan : MOSFET 2N-CH 30V 0.1A ES6
Serye : -
Katayuan ng Bahagi : Active
Uri ng FET : 2 N-Channel (Dual)
Tampok ng FET : Logic Level Gate
Drain sa Source Voltage (Vdss) : 30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 100mA
Rds On (Max) @ Id, Vgs : 4 Ohm @ 10mA, 4V
Vgs (th) (Max) @ Id : 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : -
Input Capacitance (Ciss) (Max) @ Vds : 8.5pF @ 3V
Kapangyarihan - Max : 150mW
Temperatura ng pagpapatakbo : 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : SOT-563, SOT-666
Package ng Tagabigay ng Device : ES6 (1.6x1.6)

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