BSM180C12P2E202 Pagpepresyo (USD) [164pcs Stock]
- 1 pcs$281.91240
- Bilang ng Bahagi:
- BSM180C12P2E202
- Tagagawa:
- Rohm Semiconductor
- Detalyadong Paglalarawan:
- BSM180C12P2E202 IS A SIC SILICO.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - IGBTs - Arrays, Diode - Zener - Arrays, Transistor - Espesyal na Pakay, Diode - Rectifiers - Arrays, Diode - Mga Rectifier ng Bridge and Transistor - Bipolar (BJT) - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Rohm Semiconductor BSM180C12P2E202 electronic components. BSM180C12P2E202 can be shipped within 24 hours after order. If you have any demands for BSM180C12P2E202, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSM180C12P2E202 Mga katangian ng produkto
Bilang ng Bahagi :
BSM180C12P2E202
Tagagawa :
Rohm Semiconductor
Paglalarawan :
BSM180C12P2E202 IS A SIC SILICO
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
SiC (Silicon Carbide Junction Transistor)
Drain sa Source Voltage (Vdss) :
1200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
204A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds :
20000pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
1360W (Tc)
Temperatura ng pagpapatakbo :
175°C (TJ)
Uri ng Pag-mount :
Chassis Mount
Package ng Tagabigay ng Device :
Module
Pakete / Kaso :
Module
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