IPN80R2K0P7ATMA1 Pagpepresyo (USD) [228389pcs Stock]
- 1 pcs$0.16195
- 3,000 pcs$0.15701
- Bilang ng Bahagi:
- IPN80R2K0P7ATMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CHANNEL 800V 3A SOT223.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Single, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Arrays, Transistor - Programmable Unijunction, Thyristors - Mga SCR and Transistor - IGBTs - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IPN80R2K0P7ATMA1 electronic components. IPN80R2K0P7ATMA1 can be shipped within 24 hours after order. If you have any demands for IPN80R2K0P7ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPN80R2K0P7ATMA1 Mga katangian ng produkto
Bilang ng Bahagi :
IPN80R2K0P7ATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CHANNEL 800V 3A SOT223
Serye :
CoolMOS™ P7
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2 Ohm @ 940mA, 10V
Vgs (th) (Max) @ Id :
3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs :
9nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
175pF @ 500V
Tampok ng FET :
-
Power Dissipation (Max) :
6W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-SOT223
Pakete / Kaso :
TO-261-3
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