IXTP8N65X2M Pagpepresyo (USD) [50552pcs Stock]
- 1 pcs$0.85509
- 50 pcs$0.85083
- Bilang ng Bahagi:
- IXTP8N65X2M
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 650V 4A X2 TO-220.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - IGBTs - Arrays, Diode - Rectifiers - Arrays, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Single, Pre-Biased and Transistors - IGBTs - Single ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXTP8N65X2M electronic components. IXTP8N65X2M can be shipped within 24 hours after order. If you have any demands for IXTP8N65X2M, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTP8N65X2M Mga katangian ng produkto
Bilang ng Bahagi :
IXTP8N65X2M
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 650V 4A X2 TO-220
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
4A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
550 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
800pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
32W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220
Pakete / Kaso :
TO-220-3
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