IRF200B211 Pagpepresyo (USD) [80621pcs Stock]
- 1 pcs$0.46409
- 10 pcs$0.41057
- 100 pcs$0.30699
- 500 pcs$0.23806
- 1,000 pcs$0.18794
- Bilang ng Bahagi:
- IRF200B211
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 200V 12A TO-220AB.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Arrays, Mga Transistor - JFET, Diode - RF, Thyristors - Mga TRIAC, Mga module ng Power driver, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Programmable Unijunction and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF200B211 electronic components. IRF200B211 can be shipped within 24 hours after order. If you have any demands for IRF200B211, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF200B211 Mga katangian ng produkto
Bilang ng Bahagi :
IRF200B211
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 200V 12A TO-220AB
Serye :
HEXFET®, StrongIRFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
12A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
170 mOhm @ 7.2A, 10V
Vgs (th) (Max) @ Id :
4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
790pF @ 50V
Tampok ng FET :
-
Power Dissipation (Max) :
80W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220AB
Pakete / Kaso :
TO-220-3
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