IRL6342TRPBF Pagpepresyo (USD) [358923pcs Stock]
- 1 pcs$0.10305
- 4,000 pcs$0.08901
- Bilang ng Bahagi:
- IRL6342TRPBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V 9.9A 8SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Transistor - Bipolar (BJT) - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs, Diode - Zener - Arrays, Thyristors - SCR - Mga Module, Mga Transistor - JFET and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRL6342TRPBF electronic components. IRL6342TRPBF can be shipped within 24 hours after order. If you have any demands for IRL6342TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRL6342TRPBF Mga katangian ng produkto
Bilang ng Bahagi :
IRL6342TRPBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 30V 9.9A 8SOIC
Serye :
HEXFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
9.9A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
14.6 mOhm @ 9.9A, 4.5V
Vgs (th) (Max) @ Id :
1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 4.5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
1025pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
2.5W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-SO
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
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