Vishay Semiconductor Diodes Division - 1N5406-E3/73

KEY Part #: K6453409

1N5406-E3/73 Pagpepresyo (USD) [533827pcs Stock]

  • 1 pcs$0.06929
  • 9,000 pcs$0.05555

Bilang ng Bahagi:
1N5406-E3/73
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 600V 3A DO201AD. Rectifiers 3.0 Amp 600 Volt
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - FET, MOSFET - RF, Diode - Mga Rectifier ng Bridge, Mga Transistor - Bipolar (BJT) - RF, Transistor - Mga FET, MOSFET - Single, Transistor - IGBTs - Mga Module, Diode - RF and Thyristors - Mga SCR ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division 1N5406-E3/73 electronic components. 1N5406-E3/73 can be shipped within 24 hours after order. If you have any demands for 1N5406-E3/73, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N5406-E3/73 Mga katangian ng produkto

Bilang ng Bahagi : 1N5406-E3/73
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 600V 3A DO201AD
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 600V
Kasalukuyang - Average na Rectified (Io) : 3A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.2V @ 3A
Bilis : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 600V
Capacitance @ Vr, F : 30pF @ 4V, 1MHz
Uri ng Pag-mount : Through Hole
Pakete / Kaso : DO-201AD, Axial
Package ng Tagabigay ng Device : DO-201AD
Operating temperatura - Junction : -50°C ~ 150°C

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