Infineon Technologies - IPI80P04P4L08AKSA1

KEY Part #: K6401847

IPI80P04P4L08AKSA1 Pagpepresyo (USD) [8809pcs Stock]

  • 500 pcs$0.38641

Bilang ng Bahagi:
IPI80P04P4L08AKSA1
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
MOSFET P-CH TO262-3.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
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Kumpetensyang Pakinabang:
We specialize in Infineon Technologies IPI80P04P4L08AKSA1 electronic components. IPI80P04P4L08AKSA1 can be shipped within 24 hours after order. If you have any demands for IPI80P04P4L08AKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPI80P04P4L08AKSA1 Mga katangian ng produkto

Bilang ng Bahagi : IPI80P04P4L08AKSA1
Tagagawa : Infineon Technologies
Paglalarawan : MOSFET P-CH TO262-3
Serye : Automotive, AEC-Q101, OptiMOS™
Katayuan ng Bahagi : Obsolete
Uri ng FET : P-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 40V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 80A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 8.2 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 120µA
Gate Charge (Qg) (Max) @ Vgs : 92nC @ 10V
Vgs (Max) : +5V, -16V
Input Capacitance (Ciss) (Max) @ Vds : 5430pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 75W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : PG-TO262-3-1
Pakete / Kaso : TO-262-3 Long Leads, I²Pak, TO-262AA

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