BSC031N06NS3GATMA1 Pagpepresyo (USD) [95992pcs Stock]
- 1 pcs$0.40734
- 5,000 pcs$0.33685
- Bilang ng Bahagi:
- BSC031N06NS3GATMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 60V 100A TDSON-8.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Mga module ng Power driver, Mga Transistor - Bipolar (BJT) - RF, Mga Transistor - JFET, Diode - RF, Transistor - IGBTs - Mga Module and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies BSC031N06NS3GATMA1 electronic components. BSC031N06NS3GATMA1 can be shipped within 24 hours after order. If you have any demands for BSC031N06NS3GATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC031N06NS3GATMA1 Mga katangian ng produkto
Bilang ng Bahagi :
BSC031N06NS3GATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 60V 100A TDSON-8
Serye :
OptiMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
100A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.1 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
4V @ 93µA
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
11000pF @ 30V
Tampok ng FET :
-
Power Dissipation (Max) :
2.5W (Ta), 139W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-TDSON-8
Pakete / Kaso :
8-PowerTDFN
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