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  1. Bahay
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  4. Transistor - Mga FET, MOSFET - Single
  5. FQD12N20TM

ON Semiconductor - FQD12N20TM

KEY Part #: K6392679

FQD12N20TM Pagpepresyo (USD) [136435pcs Stock]

  • 1 pcs$0.27245
  • 2,500 pcs$0.27110
Bilang ng Bahagi:
FQD12N20TM
Tagagawa:
ON Semiconductor
Detalyadong Paglalarawan:
MOSFET N-CH 200V 9A DPAK.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Thyristors - Mga TRIAC, Mga module ng Power driver, Thyristors - DIACs, SIDACs, Diode - Zener - Arrays, Mga Transistor - Bipolar (BJT) - RF, Diode - Rectifiers - Arrays and Transistor - IGBTs - Arrays ...
Kumpetensyang Pakinabang:
We specialize in ON Semiconductor FQD12N20TM electronic components. FQD12N20TM can be shipped within 24 hours after order. If you have any demands for FQD12N20TM, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQD12N20TM Mga katangian ng produkto

Bilang ng Bahagi : FQD12N20TM
Tagagawa : ON Semiconductor
Paglalarawan : MOSFET N-CH 200V 9A DPAK
Serye : QFET®
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 9A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 280 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 23nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 910pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 2.5W (Ta), 55W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : D-Pak
Pakete / Kaso : TO-252-3, DPak (2 Leads + Tab), SC-63

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