FDD5612 Pagpepresyo (USD) [221539pcs Stock]
- 1 pcs$0.16696
- 2,500 pcs$0.15970
- Bilang ng Bahagi:
- FDD5612
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 60V 5.4A DPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Programmable Unijunction, Mga Transistor - Bipolar (BJT) - RF, Transistor - Mga FET, MOSFET - Single, Mga module ng Power driver, Thyristors - SCR - Mga Module, Transistor - Espesyal na Pakay, Thyristors - Mga SCR and Diode - Zener - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FDD5612 electronic components. FDD5612 can be shipped within 24 hours after order. If you have any demands for FDD5612, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDD5612 Mga katangian ng produkto
Bilang ng Bahagi :
FDD5612
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 60V 5.4A DPAK
Serye :
PowerTrench®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
5.4A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
55 mOhm @ 5.4A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
660pF @ 30V
Tampok ng FET :
-
Power Dissipation (Max) :
3.8W (Ta), 42W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-252-3
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
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