DMN2009LSS-13 Pagpepresyo (USD) [289449pcs Stock]
- 1 pcs$0.12779
- 2,500 pcs$0.11355
- Bilang ng Bahagi:
- DMN2009LSS-13
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET N-CH 20V 12A 8-SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Bipolar (BJT) - Single, Transistor - IGBTs - Mga Module, Transistor - Programmable Unijunction, Thyristors - Mga TRIAC, Mga module ng Power driver, Transistor - Mga FET, MOSFET - Single and Diode - Mga Rectifier ng Bridge ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMN2009LSS-13 electronic components. DMN2009LSS-13 can be shipped within 24 hours after order. If you have any demands for DMN2009LSS-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2009LSS-13 Mga katangian ng produkto
Bilang ng Bahagi :
DMN2009LSS-13
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET N-CH 20V 12A 8-SOIC
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
12A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
2.5V, 10V
Rds On (Max) @ Id, Vgs :
8 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
58.3nC @ 10V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
2555pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
2W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-SOP
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
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