SI4922BDY-T1-E3 Pagpepresyo (USD) [133988pcs Stock]
- 1 pcs$0.27605
- 2,500 pcs$0.23327
- Bilang ng Bahagi:
- SI4922BDY-T1-E3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 30V 8A 8-SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Mga Transistor - FET, MOSFET - RF, Thyristors - Mga TRIAC, Transistor - Programmable Unijunction, Transistor - IGBTs - Arrays, Transistor - Espesyal na Pakay, Thyristors - SCR - Mga Module and Transistor - IGBTs - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SI4922BDY-T1-E3 electronic components. SI4922BDY-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI4922BDY-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4922BDY-T1-E3 Mga katangian ng produkto
Bilang ng Bahagi :
SI4922BDY-T1-E3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET 2N-CH 30V 8A 8-SOIC
Serye :
TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
8A
Rds On (Max) @ Id, Vgs :
16 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
2070pF @ 15V
Kapangyarihan - Max :
3.1W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
Package ng Tagabigay ng Device :
8-SO
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