SPB18P06PGATMA1 Pagpepresyo (USD) [161296pcs Stock]
- 1 pcs$0.22931
- Bilang ng Bahagi:
- SPB18P06PGATMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET P-CH 60V 18.7A TO-263.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Transistor - IGBTs - Arrays, Diode - Rectifiers - Single, Thyristors - DIACs, SIDACs, Transistor - IGBTs - Mga Module, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - Rectifiers - Arrays and Transistor - Mga FET, MOSFET - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies SPB18P06PGATMA1 electronic components. SPB18P06PGATMA1 can be shipped within 24 hours after order. If you have any demands for SPB18P06PGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SPB18P06PGATMA1 Mga katangian ng produkto
Bilang ng Bahagi :
SPB18P06PGATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET P-CH 60V 18.7A TO-263
Serye :
SIPMOS®
Katayuan ng Bahagi :
Active
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
18.7A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
130 mOhm @ 13.2A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
28nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
860pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
81.1W (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
D²PAK (TO-263AB)
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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