IXTR120P20T Pagpepresyo (USD) [4795pcs Stock]
- 1 pcs$9.98701
- 30 pcs$9.93732
- Bilang ng Bahagi:
- IXTR120P20T
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET P-CH 200V 90A ISOPLUS247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Diode - RF, Thyristors - DIACs, SIDACs, Thyristors - Mga SCR, Mga Transistor - Bipolar (BJT) - RF, Diode - Rectifiers - Single, Diode - Zener - Arrays and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXTR120P20T electronic components. IXTR120P20T can be shipped within 24 hours after order. If you have any demands for IXTR120P20T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTR120P20T Mga katangian ng produkto
Bilang ng Bahagi :
IXTR120P20T
Tagagawa :
IXYS
Paglalarawan :
MOSFET P-CH 200V 90A ISOPLUS247
Serye :
TrenchP™
Katayuan ng Bahagi :
Active
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
90A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
32 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
740nC @ 10V
Vgs (Max) :
±15V
Input Capacitance (Ciss) (Max) @ Vds :
73000pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
595W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
ISOPLUS247™
Pakete / Kaso :
TO-247-3
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