BSC080P03LSGAUMA1 Pagpepresyo (USD) [101095pcs Stock]
- 1 pcs$0.38677
- Bilang ng Bahagi:
- BSC080P03LSGAUMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET P-CH 30V 30A TDSON-8.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Single, Transistor - Bipolar (BJT) - Single, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Espesyal na Pakay, Diode - Mga Rectifier ng Bridge, Diode - Iba't ibang Kakayahan (Varicaps, Varactors and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies BSC080P03LSGAUMA1 electronic components. BSC080P03LSGAUMA1 can be shipped within 24 hours after order. If you have any demands for BSC080P03LSGAUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC080P03LSGAUMA1 Mga katangian ng produkto
Bilang ng Bahagi :
BSC080P03LSGAUMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET P-CH 30V 30A TDSON-8
Serye :
OptiMOS™
Katayuan ng Bahagi :
Not For New Designs
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
16A (Ta), 30A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
8 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
122.4nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
6140pF @ 15V
Tampok ng FET :
-
Power Dissipation (Max) :
2.5W (Ta), 89W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-TDSON-8
Pakete / Kaso :
8-PowerTDFN
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