IPG20N06S4L11ATMA1 Pagpepresyo (USD) [101237pcs Stock]
- 1 pcs$0.38623
- 5,000 pcs$0.29805
- Bilang ng Bahagi:
- IPG20N06S4L11ATMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 8TDSON.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - SCR - Mga Module, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - Mga SCR, Transistor - Programmable Unijunction, Transistor - IGBTs - Mga Module, Transistor - Mga FET, MOSFET - Single and Diode - Rectifiers - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IPG20N06S4L11ATMA1 electronic components. IPG20N06S4L11ATMA1 can be shipped within 24 hours after order. If you have any demands for IPG20N06S4L11ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPG20N06S4L11ATMA1 Mga katangian ng produkto
Bilang ng Bahagi :
IPG20N06S4L11ATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET 2N-CH 8TDSON
Serye :
Automotive, AEC-Q101, OptiMOS™
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
20A
Rds On (Max) @ Id, Vgs :
11.2 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs :
53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
4020pF @ 25V
Kapangyarihan - Max :
65W
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerVDFN
Package ng Tagabigay ng Device :
PG-TDSON-8-4
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