SIDR610DP-T1-GE3 Pagpepresyo (USD) [48704pcs Stock]
- 1 pcs$0.80281
- Bilang ng Bahagi:
- SIDR610DP-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CHAN 200V PPAK SO-8DC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Transistor - Programmable Unijunction, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Arrays, Transistor - Espesyal na Pakay, Thyristors - SCR - Mga Module, Thyristors - Mga TRIAC and Diode - Zener - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SIDR610DP-T1-GE3 electronic components. SIDR610DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIDR610DP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIDR610DP-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SIDR610DP-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CHAN 200V PPAK SO-8DC
Serye :
TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
200V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
8.9A (Ta), 39.6A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
7.5V, 10V
Rds On (Max) @ Id, Vgs :
31.9 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1380pF @ 100V
Tampok ng FET :
-
Power Dissipation (Max) :
6.25W (Ta), 125W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PowerPAK® SO-8DC
Pakete / Kaso :
PowerPAK® SO-8
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