IXTH13N110 Pagpepresyo (USD) [12961pcs Stock]
- 1 pcs$9.81269
- 10 pcs$8.91899
- 100 pcs$7.21135
- Bilang ng Bahagi:
- IXTH13N110
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 1.1KV 13A TO-247AD.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Arrays, Thyristors - Mga TRIAC, Mga Transistor - JFET, Transistor - Mga FET, MOSFET - Arrays, Transistor - IGBTs - Mga Module, Transistor - Mga FET, MOSFET - Single, Thyristors - DIACs, SIDACs and Transistor - Programmable Unijunction ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXTH13N110 electronic components. IXTH13N110 can be shipped within 24 hours after order. If you have any demands for IXTH13N110, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTH13N110 Mga katangian ng produkto
Bilang ng Bahagi :
IXTH13N110
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 1.1KV 13A TO-247AD
Serye :
MegaMOS™
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
1100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
13A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
920 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
195nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5650pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
360W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-247 (IXTH)
Pakete / Kaso :
TO-247-3
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