TP65H050WS Pagpepresyo (USD) [5775pcs Stock]
- 1 pcs$7.13493
- Bilang ng Bahagi:
- TP65H050WS
- Tagagawa:
- Transphorm
- Detalyadong Paglalarawan:
- GANFET N-CH 650V 34A TO247-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Transistor - Espesyal na Pakay, Diode - Rectifiers - Single, Transistor - Mga FET, MOSFET - Single, Diode - Zener - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in Transphorm TP65H050WS electronic components. TP65H050WS can be shipped within 24 hours after order. If you have any demands for TP65H050WS, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TP65H050WS Mga katangian ng produkto
Bilang ng Bahagi :
TP65H050WS
Tagagawa :
Transphorm
Paglalarawan :
GANFET N-CH 650V 34A TO247-3
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
GaNFET (Gallium Nitride)
Drain sa Source Voltage (Vdss) :
650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
34A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
12V
Rds On (Max) @ Id, Vgs :
60 mOhm @ 22A, 10V
Vgs (th) (Max) @ Id :
4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1000pF @ 400V
Tampok ng FET :
-
Power Dissipation (Max) :
119W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-247-3
Pakete / Kaso :
TO-247-3
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