Vishay Siliconix - SUM60030E-GE3

KEY Part #: K6418176

SUM60030E-GE3 Pagpepresyo (USD) [54394pcs Stock]

  • 1 pcs$0.76265
  • 800 pcs$0.75885

Bilang ng Bahagi:
SUM60030E-GE3
Tagagawa:
Vishay Siliconix
Detalyadong Paglalarawan:
MOSFET N-CH 80V 120A D2PAK.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
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Kumpetensyang Pakinabang:
We specialize in Vishay Siliconix SUM60030E-GE3 electronic components. SUM60030E-GE3 can be shipped within 24 hours after order. If you have any demands for SUM60030E-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SUM60030E-GE3 Mga katangian ng produkto

Bilang ng Bahagi : SUM60030E-GE3
Tagagawa : Vishay Siliconix
Paglalarawan : MOSFET N-CH 80V 120A D2PAK
Serye : TrenchFET®
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 80V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 120A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 7.5V, 10V
Rds On (Max) @ Id, Vgs : 3.2 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 141nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 7910pF @ 40V
Tampok ng FET : -
Power Dissipation (Max) : 375W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : TO-263 (D2Pak)
Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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