Vishay Semiconductor Diodes Division - V8P12-M3/86A

KEY Part #: K6444704

V8P12-M3/86A Pagpepresyo (USD) [232293pcs Stock]

  • 1 pcs$0.15923
  • 3,000 pcs$0.13247

Bilang ng Bahagi:
V8P12-M3/86A
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE SCHOTTKY 8A 120V TO-277A.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Transistor - Bipolar (BJT) - Single, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Single, Transistor - Programmable Unijunction, Diode - RF and Transistor - IGBTs - Mga Module ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division V8P12-M3/86A electronic components. V8P12-M3/86A can be shipped within 24 hours after order. If you have any demands for V8P12-M3/86A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

V8P12-M3/86A Mga katangian ng produkto

Bilang ng Bahagi : V8P12-M3/86A
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE SCHOTTKY 8A 120V TO-277A
Serye : Automotive, AEC-Q101, eSMP®, TMBS®
Katayuan ng Bahagi : Active
Uri ng Diode : Schottky
Boltahe - DC Reverse (Vr) (Max) : 120V
Kasalukuyang - Average na Rectified (Io) : 8A
Boltahe - Ipasa (Vf) (Max) @ Kung : 840mV @ 8A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Kasalukuyang - Reverse Leakage @ Vr : 300µA @ 120V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : TO-277, 3-PowerDFN
Package ng Tagabigay ng Device : TO-277A (SMPC)
Operating temperatura - Junction : -40°C ~ 150°C

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