ES1BLHR3G Pagpepresyo (USD) [997030pcs Stock]
- 1 pcs$0.03710
- Bilang ng Bahagi:
- ES1BLHR3G
- Tagagawa:
- Taiwan Semiconductor Corporation
- Detalyadong Paglalarawan:
- DIODE GEN PURP 100V 1A SUB SMA. Rectifiers 1A, 100V, SUPER FAST SM RECTIFIER
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Arrays, Transistor - Mga FET, MOSFET - Single, Thyristors - DIACs, SIDACs, Transistor - Mga FET, MOSFET - Arrays, Transistor - Bipolar (BJT) - Arrays, Mga Transistor - Bipolar (BJT) - RF, Mga Transistor - FET, MOSFET - RF and Transistor - Espesyal na Pakay ...
- Kumpetensyang Pakinabang:
- We specialize in Taiwan Semiconductor Corporation ES1BLHR3G electronic components. ES1BLHR3G can be shipped within 24 hours after order. If you have any demands for ES1BLHR3G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ES1BLHR3G Mga katangian ng produkto
Bilang ng Bahagi :
ES1BLHR3G
Tagagawa :
Taiwan Semiconductor Corporation
Paglalarawan :
DIODE GEN PURP 100V 1A SUB SMA
Serye :
Automotive, AEC-Q101
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
100V
Kasalukuyang - Average na Rectified (Io) :
1A
Boltahe - Ipasa (Vf) (Max) @ Kung :
950mV @ 1A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
35ns
Kasalukuyang - Reverse Leakage @ Vr :
5µA @ 100V
Capacitance @ Vr, F :
10pF @ 4V, 1MHz
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
DO-219AB
Package ng Tagabigay ng Device :
Sub SMA
Operating temperatura - Junction :
-55°C ~ 150°C
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