[3464pcs Stock]
- Bilang ng Bahagi:
- PHK4NQ10T,518
- Tagagawa:
- NXP USA Inc.
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V SOT96-1.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Arrays, Transistor - Bipolar (BJT) - Arrays, Transistor - Espesyal na Pakay, Diode - Mga Rectifier ng Bridge, Mga module ng Power driver, Transistor - Mga FET, MOSFET - Single, Mga Transistor - JFET and Diode - Iba't ibang Kakayahan (Varicaps, Varactors ...
- Kumpetensyang Pakinabang:
- We specialize in NXP USA Inc. PHK4NQ10T,518 electronic components. PHK4NQ10T,518 can be shipped within 24 hours after order. If you have any demands for PHK4NQ10T,518, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHK4NQ10T,518 Mga katangian ng produkto
Bilang ng Bahagi :
PHK4NQ10T,518
Tagagawa :
NXP USA Inc.
Paglalarawan :
MOSFET N-CH 100V SOT96-1
Serye :
TrenchMOS™
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
-
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
70 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
880pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
2.5W (Ta)
Temperatura ng pagpapatakbo :
-65°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-SO
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
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