IRF7389TRPBF Pagpepresyo (USD) [204471pcs Stock]
- 1 pcs$0.18089
- 4,000 pcs$0.17365
- Bilang ng Bahagi:
- IRF7389TRPBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N/P-CH 30V 8-SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Single, Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Arrays, Transistor - Mga FET, MOSFET - Single, Diode - Zener - Arrays and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF7389TRPBF electronic components. IRF7389TRPBF can be shipped within 24 hours after order. If you have any demands for IRF7389TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7389TRPBF Mga katangian ng produkto
Bilang ng Bahagi :
IRF7389TRPBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N/P-CH 30V 8-SOIC
Serye :
HEXFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N and P-Channel
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
-
Rds On (Max) @ Id, Vgs :
29 mOhm @ 5.8A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
650pF @ 25V
Kapangyarihan - Max :
2.5W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
Package ng Tagabigay ng Device :
8-SO
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