Infineon Technologies - BSC027N06LS5ATMA1

KEY Part #: K6419184

BSC027N06LS5ATMA1 Pagpepresyo (USD) [96020pcs Stock]

  • 1 pcs$0.40722
  • 5,000 pcs$0.37362

Bilang ng Bahagi:
BSC027N06LS5ATMA1
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
MOSFET N-CH 60V 100A 8TDSON.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Thyristors - SCR - Mga Module, Transistor - Bipolar (BJT) - Single, Transistor - Bipolar (BJT) - Arrays, Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - RF and Mga module ng Power driver ...
Kumpetensyang Pakinabang:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC027N06LS5ATMA1 Mga katangian ng produkto

Bilang ng Bahagi : BSC027N06LS5ATMA1
Tagagawa : Infineon Technologies
Paglalarawan : MOSFET N-CH 60V 100A 8TDSON
Serye : OptiMOS™
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 100A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 2.7 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 2.3V @ 49µA
Gate Charge (Qg) (Max) @ Vgs : 30nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4400pF @ 30V
Tampok ng FET : -
Power Dissipation (Max) : 83W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : PG-TDSON-8
Pakete / Kaso : 8-PowerTDFN