FDN337N Pagpepresyo (USD) [688873pcs Stock]
- 1 pcs$0.05396
- 3,000 pcs$0.05369
- Bilang ng Bahagi:
- FDN337N
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 30V 2.2A SSOT3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs, Mga Transistor - JFET, Mga Transistor - FET, MOSFET - RF, Diode - Zener - Single, Transistor - IGBTs - Mga Module, Mga module ng Power driver and Transistor - Bipolar (BJT) - Single ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FDN337N electronic components. FDN337N can be shipped within 24 hours after order. If you have any demands for FDN337N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDN337N Mga katangian ng produkto
Bilang ng Bahagi :
FDN337N
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 30V 2.2A SSOT3
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
2.2A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
65 mOhm @ 2.2A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
9nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
300pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
500mW (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
SuperSOT-3
Pakete / Kaso :
TO-236-3, SC-59, SOT-23-3
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