IXFQ23N60Q Pagpepresyo (USD) [8619pcs Stock]
- 1 pcs$5.26196
- Bilang ng Bahagi:
- IXFQ23N60Q
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 600V 23A TO-268D3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - RF, Transistor - IGBTs - Arrays, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - Mga SCR, Transistor - Espesyal na Pakay and Thyristors - SCR - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXFQ23N60Q electronic components. IXFQ23N60Q can be shipped within 24 hours after order. If you have any demands for IXFQ23N60Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFQ23N60Q Mga katangian ng produkto
Bilang ng Bahagi :
IXFQ23N60Q
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 600V 23A TO-268D3
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
23A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
-
Tampok ng FET :
-
Power Dissipation (Max) :
-
Temperatura ng pagpapatakbo :
-
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-268
Pakete / Kaso :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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