IRF100B202 Pagpepresyo (USD) [49481pcs Stock]
- 1 pcs$0.76094
- 10 pcs$0.67230
- 100 pcs$0.53141
- 500 pcs$0.41210
- 1,000 pcs$0.30775
- Bilang ng Bahagi:
- IRF100B202
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V 97A TO-220AB.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Zener - Arrays and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF100B202 electronic components. IRF100B202 can be shipped within 24 hours after order. If you have any demands for IRF100B202, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF100B202 Mga katangian ng produkto
Bilang ng Bahagi :
IRF100B202
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 100V 97A TO-220AB
Serye :
HEXFET®, StrongIRFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
97A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
8.6 mOhm @ 58A, 10V
Vgs (th) (Max) @ Id :
4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs :
116nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4476pF @ 50V
Tampok ng FET :
-
Power Dissipation (Max) :
221W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220AB
Pakete / Kaso :
TO-220-3
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