FQA11N90C-F109 Pagpepresyo (USD) [19729pcs Stock]
- 1 pcs$2.08892
- Bilang ng Bahagi:
- FQA11N90C-F109
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 900V 11A TO-3P.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Thyristors - DIACs, SIDACs, Thyristors - Mga SCR, Thyristors - SCR - Mga Module, Diode - Zener - Arrays, Mga Transistor - JFET, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor FQA11N90C-F109 electronic components. FQA11N90C-F109 can be shipped within 24 hours after order. If you have any demands for FQA11N90C-F109, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQA11N90C-F109 Mga katangian ng produkto
Bilang ng Bahagi :
FQA11N90C-F109
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 900V 11A TO-3P
Serye :
QFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
900V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
11A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.1 Ohm @ 5.5A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
80nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
3290pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
300W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-3P
Pakete / Kaso :
TO-3P-3, SC-65-3
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